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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV97CE UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Internal input matching to achieve high power gain * Ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability DESCRIPTION
BLV97CE
NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange.
QUICK REFERENCE DATA RF performance up to Th = 25 C in a common emitter class-AB circuit. MODE OF OPERATION c.w. class-AB PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol.
1 Top view 3 5
MAM141
f (MHz) 960
VCE (V) 24
PL (W) 35
GP (dB) >7
c (%) > 50
handbook, halfpage
2
4
6
c b e
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector base voltage collector emitter voltage emitter base voltage collector current collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector DC or average peak value f > 1 MHz f > 1 MHz Tmb = 25 C MIN. - - - - - - -65 -
BLV97CE
MAX. 50 27 3.5 3 9 70 150 200 V V V A A W
UNIT
C C
THERMAL RESISTANCE SYMBOL Rthj-mb Rth mb-h PARAMETER from junction to mounting base (RF) from mounting base to heatsink CONDITIONS TYP. - - MAX. 2.3 0.4 UNIT K/W K/W
handbook, halfpage
10
MDA441
handbook, halfpage
100 Ptot
MDA442
IC (A) Th = 70 C 1
Tmb = 25 C
(W) 80
60
II
40
I
20
10-1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) 160
Fig.2 DC SOAR.
Fig.3
Power/temperature derating; I: DC or RF operation; II: short-term operation during mismatch.
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS at Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Ccf PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance at f = 1 MHz feedback capacitance at f = 1 MHz collector-flange capacitance CONDITIONS open emitter IC = 50 mA open base IC = 100 mA open collector IE = 10 mA VBE = 0 VCE = 27 V IC = 2 A VCE = 20 V IE = Ie = 0 VCB = 25 V IC = 0 VCE = 25 V MIN. 50 27 3.5 - 15 - - - TYP. - - - - - 44 30 2
BLV97CE
MAX. - - - 10 - - - - V V V
UNIT
mA
pF pF pF
handbook, halfpage
100
MDA443
handbook, halfpage
hFE 80
100 Cc
MDA444
VCE = 25 V
(pF) 80
20 V 60
60
40
40
20
20
0 0 2 4 6 IC (A) 8
0 0 10 20 VCB (V) 30
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Output capacitance as a function of collector-base voltage; typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance in a common emitter test circuit. Th = 25 C, Rth mb-h = 0.4 K/W unless otherwise specified. MODE OF OPERATION c.w. class-AB f (MHz) 960 24 VCE (V) IC(ZS) (mA) 60 PL (W) 35 GP (dB) >7 typ. 8.5
BLV97CE
c (%) > 50 typ. 55
handbook, halfpage
12
MDA445
60 (%) 40
handbook, halfpage
Gp
50 PL
MDA446
Gp (dB) 8
(W) 40
30
20 4 20 10
0 0 10 20 30 PL (W)
0 40
0 0 2 4 6 PS (W) 8
Fig.6
Power gain and efficiency as a function of load power; typical values.
Fig.7
Load power as a function of input power; typical values.
Ruggedness in class-AB operation The BLV97CE is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VCE = 24 V; IC(ZS) = 120 mA; f = 960 MHz at rated output power.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
handbook, full pagewidth
L6
L7 VCC
VB C8 R1 L5 C7 C11 L8 R2 C10 C9
50 input
C1
,,,,,, ,,,,,,
L1 L2 L3 C6 L4 D.U.T. C13 L9 C15 L11 L10 L12 C2 C3 C4 C5 C12 C14 C16
C18
50 output
C17
MDA447
Fig.8 Test circuit BLV97CE class-AB.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
List of components (Fig.9) DESIGNATION C1, C18 C2, C3, C16, C17 C5, C6 C7, C11 C8 C9 C10 C12, C13 C14, C15 L1, L12 L2, L3 L4 L5 DESCRIPTION multilayer ceramic chip capacitor note 1 film dielectric trimmer multilayer ceramic chip capacitor note 2 multilayer ceramic chip capacitor note 1 multilayer ceramic chip capacitor 35 V solid aluminium capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor note 2 multilayer ceramic chip capacitor note 1 microstrip note 3 microstrip note 3 microstrip note 3 3 turns enamelled 1 mm copper wire VALUE 33 pF 1.4 to 5.5 pF 3.3 pF 10 pF 100 nF 2.2 F 3 x 100 nF in parallel 12 pF 3.3 pF 50 50 42.6 30 nH 26 x 2.4 mm 9.5 x 2.4 mm 6.0 x 3.0 mm int. dia. 4 mm length 3 mm leads 2 x 5 mm DIMENSIONS
BLV97CE
CATALOGUE NO.
2222 809 09001
2222 128 50228
L6, L7 L8
grade 3B ferroxcube wide-band RF choke 4 turns enamelled 1 mm copper wire 45 nH int. dia. 4 mm length 4 mm leads 2 x 5 mm 4.0 x 3.0 mm 9.0 x 2.4 mm 13.5 x 2.4 mm
4312 020 36642
L9 L10 L11 R1, R2 Notes
microstrip note 3 microstrip note 3 microstrip note 3 1 W metal film resistor
42.6 50 50 10
2322 153 51009
1. ATC capacitor type 100B or capacitor of the same quality. 2. ATC capacitor type 100A or capacitor of the same quality. 3. The microstrips are on a double copper-clad PCB with PTFE fibre-glass dielectric (r = 2.2); thickness 132 inch.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
handbook, full pagewidth
130 mm
copper straps
copper straps
rivets
rivets 70 mm
rivets copper straps
rivets copper straps
L6 C7 R1 C8 C1 L1 L2 C4 C2 C3 L3 C5 L5 C6 L4 L9 C13 C11
L7
R2 L8 C15 L11 C12 C14 L10
C10
C9
C18 L12
C16
C17
MDA448
The circuit and components are located on one side of the PTFE fibre-glass board, the other side being fully metallized, to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters, to provide a direct contact between the component side and the ground plane.
Fig.9 Printed circuit board and component layout for 960 MHz test circuit.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
MRA176
MRC177
handbook, 10 halfpage
4 handbook, halfpage Xi ZL () 3
Zi () 8
6
2 RL
4 Ri 2
1
0 XL
0 800
850
900
950 f (MHz)
1000
-1 800
850
900
950 f (MHz)
1000
Fig.10 Input impedance; series components; VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W; typical values.
Fig.11 Load impedance; series components; VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W; typical values.
handbook, halfpage
12
MRC175
GP (dB)
8
4
0 800
850
900
950 f (MHz)
1000
Fig.12 Power gain; class-AB operation; VCE = 24 V; PL = 35 W; Rth mb-h = 0.4 K/W; typical values.
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV97CE
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV97CE
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
11

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